新書推薦：
《
没有明天的我们，在昨天相恋
》
售價：HK$
47.1
《
流动的白银（一部由白银打开的人类文明发展史）
》
售價：HK$
63.8
《
饮食的谬误：别让那些流行饮食法害了你
》
售價：HK$
63.8
《
三千年系列：文治三千年+武治三千年+兵器三千年
》
售價：HK$
197.3
《
甲骨文常用字字典（精） 新版
》
售價：HK$
74.8
《
赖世雄经典英语语法：2025全新修订版（赖老师经典外语教材，老版《赖氏经典英语语法》超32000条读者好评！）
》
售價：HK$
65.8
《
影神图 精装版
》
售價：HK$
140.8
《
不止于判断：判断与决策学的发展史、方法学及判断理论
》
售價：HK$
74.8
|
| 內容簡介： |
|
《半导体物理性能手册第1卷英文版》系Springer手册精选原版系列。《半导体物理性能手册第1卷英文版》主要包括Diamond（C）、Silicon（Si）、Germanium（C）、Gray Tin（a—Sn）、Cubic Silicon Carbide（3C—SiC）、Hexagonal Silicon Carbide（2H—，4H—，6H—SiC，etc.）、Rhombohedral Silicon Carbide（15R—，21R—，24R—SiC，etc.）等内容。
|
| 目錄：
|
Preface
Acknowledgments
Contents of Other Volumes
1 Diamond （C）
1.1 Structural Properties
1.1.1 Ionicity
1.1.2 Elemental Isotopic Abundance and Molecular Weight
1.1.3 Crystal Structure and Space Group
1.1.4 Lattice Constant and Its Related Parameters
1.1.5 Structural Phase Transition
1.1.6 Cleavage Plane
1.2 Thermal Properties
1.2.1 Melting Point and Its Related Parameters
1.2.2 Specific Heat
1.2.3 Debye Temperature
1.2.4 Thermal Expansion Coefficient
1.2.5 Thermal Conductivity and Diffusivity
1.3 Elastic Properties
1.3.1 Elastic Constant
1.3.2 Third—Order Elastic Constant
1.3.3 Young''s Modulus， Poisson''s Ratio， and Similar
1.3.4 Microhardness
1.3.5 Sound Velocity
1.4 Phonons and Lattice Vibronic Properties
1.4.1 Phonon Dispersion Relation
1.4.2 Phonon Frequency
1.4.3 Mode Gruneisen Parameter
1.4.4 Phonon Deformation Potential
1.5 Collective Effects and Related Properties
1.5.1 Piezoelectric Constant
1.5.2 Frohlich Coupling Constant
1.6 Energy—Band Structure： Energy—Band Gaps
1.6.1 Basic Properties
1.6.2 E0—Gap Region
1.6.3 Higher—Lying Direct Gap
1.6.4 Lowest Indirect Gap
1.6.5 Conduction—Valley Energy Separation
1.6.6 Direct—Indirect—Gap Transition Pressure
1.7 Energy—Band Structure： Electron and Hole Effective Masses
1.7.1 Electron Effective Mass： Γ Valley
1.7.2 Electron Effective Mass： Satellite Valley
1.7.3 Hole Effective Mass
1.8 Electronic Deformation Potential
1.8.1 Intravalley Deformation Potential： Γ Point
1.8.2 Intravalley Deformation Potential： High—Symmetry Points
1.8.3 Intervalley Deformation Potential
1.9 Electron Affinity and Schottky Barrier Height
1.9.1 Electron Affinity
1.9.2 Schottky Barrier Height
1.10 Optical Properties
1.10.1 Summary of Optical Dispersion Relations
1.10.2 The Reststrahlen Region
1.10.3 At or Near the Fundamental Absorption Edge
1.10.4 The Interband Transition Region
1.10.5 Free—Carrier Absorption and Related Phenomena
1.11 Elastooptic， Electrooptic， and Nonlinear Optical Properties
1.11.1 Elastooptic Effect
1.11.2 Linear Electrooptic Constant
1.11.3 Quadratic Electrooptic Constant
1.11.4 Franz—Keldysh Effect
1.11.5 Nonlinear Optical Constant
1.12 Carrier Transport Properties
1.12.1 Low—Field Mobility： Electrons
1.12.2 Low—Field Mobility： Holes
1.12.3 High—Field Transport： Electrons
1.12.4 High—Field Transport： Holes
1.12.5 Minority—Carrier Transport： Electrons in ρ—Type Materials
1.12.6 Minority—Carrier Transport： Holes in n—Type Materials
1.12.7 Impact Ionization Coefficient
2 Silicon （Si）
2.1 Structural Properties
2.1.1 Ionicity
2.1.2 Elemental Isotopic Abundance and Molecular Weight
2.1.3 Crystal Structure and Space Group
2.1.4 Lattice Constant and Its Related Parameters
2.1.5 Structural Phase Transition
2.1.6 Cleavage Plane
2.2 Thermal Properties
2.2.1 Melting Point and Its Related Parameters
2.2.2 Specific Heat
2.2.3 Debye Temperature
2.2.4 Thermal Expansion Coefficient
2.2.5 Thermal Conductivity and Diffusivity
2.3 Elastic Properties
2.3.1 Elastic Constant
2.3.2 Third—Order Elastic Constant
2.3.3 Young''s Modulus， Poisson''s Ratio， and Similar
2.3.4 Microhardness
2.3.5 Sound Velocity
2.4 Phonons and Lattice Vibronic Properties
2.4.1 Phonon Dispersion Relation
2.4.2 Phonon Frequency
2.4.3 Mode Gruneisen Parameter
2.4.4 Phonon Deformation Potential
2.5 Collective Effects and Related Properties
2.5.1 Piezoelectric Constant
2.5.2 Frohlich Coupling Constant
2.6 Energy—Band Structure： Energy—Band Gaps
2.6.1 Basic Properties
2.6.2 E0—Gap Region
2.6.3 Higher—Lying Direct Gap
2.6.4 Lowest Indirect Gap
2.6.5 Conduction—Valley Energy Separation
2.6.6 Direct—Indirect—Gap Transition Pressure
2.7 Energy—Band Structure： Electron and Hole Effective Masses
2.7.1 Electron Effective Mass： Γ Valley
2.7.2 Electron Effective Mass： Satellite Valley
2.7.3 Hole Effective Mass
2.8 Electronic Deformation Potential
2.8.1 Intravalley Deformation Potential： Γ Point
2.8.2 Intravalley Deformation Potential： High—Symmetry Points
2.8.3 Intervalley Deformation Potential
2.9 Electron Affinity and Schottky Barrier Height
2.9.1 Electron Affinity
2.9.2 Schottky Barrier Height
2.10 Optical Properties
2.10.1 Summary of Optical Dispersion Relations
2.10.2 The Reststrahlen Region
2.10.3 At or Near the Fundamental Absorption Edge
2.10.4 The Interband Transition Region
2.10.5 Free—Carrier Absorption and Related Phenomena
2.11 Elastooptic， Electrooptic， and Nonlinear Optical Properties
2.11.1 Elastooptic Effect
2.11.2 Linear Electrooptic Constant
2.11.3 Quadratic Electrooptic Constant
2.11.4 Franz—Keldysh Effect
2.11.5 Nonlinear Optical Constant
2.12 Carrier Transport Properties
2.12.1 Low—Field Mobility： Electrons
2.12.2 Low—Field Mobility： Holes
2.12.3 High—Field Transport： Electrons
2.12.4 High—Field Transport： Holes
2.12.5 Minority—Carrier Transport： Electrons in p—Type Materials
2.12.6 Minority—Carrier Transport： Holes in n—Type Materials
2.12.7 Impact Ionization Coefficient
3 Germanium （C）
3.1 Structural Properties
3.1.1 Ionicity
3.1.2 Elemental Isotopic Abundance and Molecular Weight
3.1.3 Crystal Structure and Space Group
3.1.4 Lattice Constant and Its Related Parameters
3.1.5 Structural Phase Transition
3.1.6 Cleavage Plane
3.2 Thermal Properties
3.2.1 Melting Point and Its Related Parameters
3.2.2 Specific Heat
3.2.3 Debye Temperature
3.2.4 Thermal Expansion Coefficient
3.2.5 Thermal Conductivity and Diffusivity
3.3 Elastic Properties
3.3，1 Elastic Constant
3.3.2 Third—Order Elastic Constant
3.3.3 Young''s Modulus， Poisson''s Ratio， and Similar
3.3.4 Microhardness
3.3.5 Sound Velocity
3.4 Phonons and Lattice Vibronic Properties
3.4.1 Phonon Dispersion Relation
3.4.2 Phonon Frequency
3.4.3 Mode Gruneisen Parameter
3.4.4 Phonon Deformation Potential
3.5 Collective Effects and Related Properties
3.5.1 Piezoelectric Constant
3.5.2 Frohlich Coupling Constant
3.6 Energy—Band Structure： Energy—Band Gaps
3.6.1 Basic Properties
3.6.2 Eo—Gap Region
3.6.3 Higher—Lying Direct Gap
3.6.4 Lowest Indirect Gap
3.6.5 Conduction—Valley Energy Separation
3.6.6 Direct—Indirect—Gap Transition Pressure
3.7 Energy—Band Structure： Electron and Hole Effective Masses
3.7.1 Electron Effective Mass： F Valiey
3.7.2 Electron Effective Mass： Satellite Valley
3.7.3 Hole Effective Mass
3.8 Electronic Deformation Potential
3.8.1 Intravalley Deformation Potential： Γ Point
3.8.2 Intravalley Deformation Potential： High—Symmetry Points
3.8.3 Intervalley Deformation Potential
3.9 Electron Affinity and Schottky Barrier Height
3.9.1 Electron Affinity
3.9.2 Schottky Barrier Height
3.10 Optical Properties
3.10.1 Summary of Optical Dispersion Relations
3.10.2 The Reststrahlen Region
3.10.3 At or Near the Fundamental Absorption Edge
3.10.4 The Interband Transition Region
3.10.5 Free—Carrier Absorption and Related Phenomena
3.11 Elastooptic， Electrooptic， and Nonlinear Optical Properties
3.11.1 Elastooptic Effect
3.11.2 Linear Electrooptic Constant
3.11.3 Quadratic Electrooptic Constant
3.11.4 Franz—Keldysh Effect
3.11.5 Nonlinear Optical Constant
3.12 Carrier Transport Properties
3.12.1 Low—Field Mobility： Electrons
3.12.2 Low—Field Mobility： Holes
3.12.3 High—Field Transport： Electrons
3.12.4 High—Field Transport： Holes
3.12.5 Minority—Carrier Transport： Electrons in p—Type Materials
3.12.6 Minority—Carrier Transport： Holes in n—Type Materials
3.12.7 Impact Ionization Coefficient
4 Gray Tin （a—Sn）
4.1 Structural Properties
4.1.1 lonicity
4.1.2 Elemental Isotopic Abundance and Molecular Weight
4.1.3 Crystal Structure and Space Group
4.1.4 Lattice Constant and Its Related Parameters
4.1.5 Structural Phase Transition
4.1.6 Cleavage Plane
4.2 Thermal Properties
4.2.1 Melting Point and Its Related Parameters
4.2.2 Specific Heat
4.2.3 Debye Temperature
4.2.4 Thermal Expansion Coefficient
4.2.5 Thermal Conductivity and Diffusivity
4.3 Elastic Properties
4.3.1 Elastic Constant
4.3.2 Third—Order Elastic Constant
4.3.3 Young''s Modulus， Poisson''s Ratio， and Similar
4.3.4 Microhardness
4.3.5 Sound Velocity
4.4 Phonons and Lattice Vibronic Properties
4.4.1 Phonon Dispersion Relation
4.4.2 Phonon Frequency
4.4.3 Mode Gruneisen Parameter
4.4.4 Phonon Deformation Potential
4.5 Collective Effects and Related Properties
4.5.1 Piezoelectric Constant
4.5.2 Frohlich Coupling Constant
4.6 Energy—Band Structure： Energy—Band Gaps
4.6.1 Basic Properties
4.6.2 Eo—Gap Region
4.6.3 Higher—Lying Direct Gap
4.6.4 Lowest Indirect Gap
4.6.5 Conduction—Valley Energy Separation
4.6.6 Direct—Indirect—Gap Transition Pressure
4.7 Energy—Band Structure： Electron and Hole Effective Masses
4.7.1 Electron Effective Mass： Γ Valley
4.7.2 Electron Effective Mass： Satellite Valley
4.7.3 Hole Effective Mass
4.8 Electronic Deformation Potential
4.8.1 Intravalley Deformation Potential： Γ Point
4.8.2 Intravalley Deformation Potential： High—Symmetry Points
4.8.3 Intervalley Deformation Potential
4.9 Electron Affinity and Schottky Barrier Height
4.9.1 Electron Affinity
4.9.2 Schottky Barrier Height
4.10 Optical Properties
4.10.1 Summary of Optical Dispersion Relations
4.10.2 The Reststrahlen Region
4.10.3 At or Near the Fundamental Absorption Edge
4.10.4 The Interband Transition Region
4.10.5 Free—Carrier Absorption and Related Phenomena
4.11 Elastooptic， Electrooptic， and Nonlinear Optical Properties
4.11.1 Elastooptic Effect
4.11.2 Linear Electrooptic Constant
4.11.3 Quadratic Electrooptic Constant
4.11.4 Franz—Keldysh Effect
4.11.5 Nonlinear Optical Constant
4.12 Carrier Transport Properties
4.12.1 Low—Field Mobility： Electrons
4.12.2 Low—Field Mobility： Holes
4.12.3 High—Field Transport： Electrons
4.12.4 High—Field Transport： Holes
4.12.5 Minority—Carrier Transport： Electrons in p—Type Materials
4.12.6 Minority—Carrier Transport： Holes in n—Type Materials
4.12.7 Impact Ionization Coefficient
……
5 Cubic Silicon Carbide （3C—SiC）
6 Hexagonal Silicon Carbide （2H—， 4H—， 6H—SiC， etc.）
7 Rhombohedral Silicon Carbide （15R—， 21R—， 24R—SiC， etc.）
|
|
購物車/收銀台(0) | 在線留言板
| 付款方式
| 運費計算
| 聯絡我們
| 幫助中心 |
加入書簽
HOME
新書上架
